114學年材料系-第十二週 專題研討課程 演講公告 (114年11月24日)

Semiconductor reliability analysis is crucial to ensure that electronic products perform properly and function within the intended design criteria.
The monitoring of circuits during usage ensures the safety and performance of the electronic systems for applications in the automotive, industrial, and medical sectors. The accelerated testing of circuits is also important to acquire reliability forecasts. Front-end time-dependent dielectric breakdown (FEOL TDDB) is one of the most important failure mechanisms for semiconductor devices, which is caused by the buildup of traps in the dielectric region during usage.
In this talk, I will describe methodologies to estimate the wear out parameters of FEOL TDDB for SRAMs using on-line data collected during operations and the investigation of the factors affecting accelerated testing.

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