114學年材料所-第十一週 專題研討課程 演講公告 (114年11月20日)
2025.11.15
題目:
從光源到透鏡-氮化鋁薄膜的機會與挑戰
From emitter to lens-the opportunities and challenges of AlN thin film
演講者 : 黃嘉彥(Chia-Yen Huang)
現職 : 國立陽明交通大學 光電工程學系 助理教授
時間: 114年 11月 20日(四) 3:20~4:00 pm
地點: 鋼構區(3F)共同教室A1302演講廳
演講摘要:
Aluminum nitride is an ultra-wide bandgap semiconductor with strong mechanical and thermal properties. Conventionally, AlN poly-crystalline substrate is widely used for thermal management applications. In the past decades, the emergence of single-crystalline AlN film on sapphire substrate triggered its new applications in deep ultraviolet light-emitting diodes (LED) and metalens. However, numerous practical challenges are still in the way of the wide deployment. In this seminar, Prof. Huang will reveal how the interplay of defect density and strain state impacts the final performance of the AlGaN-based UVC LED. The design methodology and experimental demonstration of a high numerical aperture lens with AlN thin-film in the deep-UV spectral region will also be revealed.
從光源到透鏡-氮化鋁薄膜的機會與挑戰
From emitter to lens-the opportunities and challenges of AlN thin film
演講者 : 黃嘉彥(Chia-Yen Huang)
現職 : 國立陽明交通大學 光電工程學系 助理教授
時間: 114年 11月 20日(四) 3:20~4:00 pm
地點: 鋼構區(3F)共同教室A1302演講廳
演講摘要:
Aluminum nitride is an ultra-wide bandgap semiconductor with strong mechanical and thermal properties. Conventionally, AlN poly-crystalline substrate is widely used for thermal management applications. In the past decades, the emergence of single-crystalline AlN film on sapphire substrate triggered its new applications in deep ultraviolet light-emitting diodes (LED) and metalens. However, numerous practical challenges are still in the way of the wide deployment. In this seminar, Prof. Huang will reveal how the interplay of defect density and strain state impacts the final performance of the AlGaN-based UVC LED. The design methodology and experimental demonstration of a high numerical aperture lens with AlN thin-film in the deep-UV spectral region will also be revealed.