第十四周碩博專討演講公告(12/16)

碩博專討演講公告

題目:

Wafer-scale Epitaxial Growth of Single-Crystal Three-atom-thick Nanoribbons

主講人:童俊智 教授

現職:阿布都拉國王科技大學 材料與工程科學系 副教授

內容摘要:

Two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers have been considered promising for future transistor device downscaling. The growth of high-quality and single-crystal TMD monolayers are yet to be developed for electronic applications. Here we show that step-edge epitaxy growth enables the controllable and scalable growth of single-crystal 2D monolayers. In this talk, I will present our recent findings in a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS₂ nanoribbons and films on β-gallium (III) oxide (β-Ga₂O₃) (100) substrates. LDE MoS₂ nanoribbons have spatial uniformity over a long-range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS₂ nanoribbon-based field-effect transistors exhibit high on/off ratios of 10⁸ and a peak room temperature electron mobility of 109 cm²V^-1s^-1. The MoS₂ nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga₂O₃ can be re-used after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe₂ nanoribbons and lateral heterostructures made of p-WSe₂ and n-MoS₂ nanoribbons for futuristic electronics applications.

時間:民國110年12月16日 星期四 

地點:moodle上觀看線上影片及成功大學成功校區三系館鋼構區(3F)共同教室 A1302演講廳

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