第三週碩博專討演講公告(3/11)
2021.03.08
碩博專題演講公告
題 目:
Ultrafast Responsive Non-Volatile Flash Photomemory Via Spatially Addressable Perovskite/Block Copolymer Composite Film
嵌段共聚物/鈣鈦礦複合膜於非揮發性光記憶體之應用
主講人:陳蓉瑤 教授 Prof. Jung-Yao Chen
現職: 國立成功大學 光電科學與工程學系 助理教授
內容摘要:
The exotic photophysical properties of organic-inorganic hybrid perovskite with long exciton lifetime and small binding energy have appeared as promising front-runners for next-generation non-volatile flash photomemory. However, the long photo-programming time of photomemory limits its application on light-fidelity (Li-Fi), which requires high storage capacity and short programming time. Herein, the spatially addressable perovskite in polystyrene-block-poly(ethylene oxide) (PS-b-PEO)/perovskite composite film as photoactive floating gate was demonstrated to elucidate the effect of morphology on the photo-responsive characteristics of photomemory. The chelation between lead ion and PEO segment promoted the anti-solvent functionalities of perovskite/PS-b-PEO composite film, thus allowing the solution-processable poly(3-hexylthiophene-2,5-diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo-induced charge transfer rate of 0.056 ns-1, high charge transfer efficiency of 89%, ON/OFF current ratio of 104 and extremely low programming time of 5 ms can be achieved. This solution-processable and fast photo-programmable non-volatile flash photomemory can trigger the practical application on Li-Fi.
時 間：民國 110 年 3月 11日 星期四 下午 3:10
地 點： 成功大學成功校區三系館鋼構區(3F)共同教室 A1302演講廳
歡迎參加!!
題 目:
Ultrafast Responsive Non-Volatile Flash Photomemory Via Spatially Addressable Perovskite/Block Copolymer Composite Film
嵌段共聚物/鈣鈦礦複合膜於非揮發性光記憶體之應用
主講人:陳蓉瑤 教授 Prof. Jung-Yao Chen
現職: 國立成功大學 光電科學與工程學系 助理教授
內容摘要:
The exotic photophysical properties of organic-inorganic hybrid perovskite with long exciton lifetime and small binding energy have appeared as promising front-runners for next-generation non-volatile flash photomemory. However, the long photo-programming time of photomemory limits its application on light-fidelity (Li-Fi), which requires high storage capacity and short programming time. Herein, the spatially addressable perovskite in polystyrene-block-poly(ethylene oxide) (PS-b-PEO)/perovskite composite film as photoactive floating gate was demonstrated to elucidate the effect of morphology on the photo-responsive characteristics of photomemory. The chelation between lead ion and PEO segment promoted the anti-solvent functionalities of perovskite/PS-b-PEO composite film, thus allowing the solution-processable poly(3-hexylthiophene-2,5-diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo-induced charge transfer rate of 0.056 ns-1, high charge transfer efficiency of 89%, ON/OFF current ratio of 104 and extremely low programming time of 5 ms can be achieved. This solution-processable and fast photo-programmable non-volatile flash photomemory can trigger the practical application on Li-Fi.
時 間：民國 110 年 3月 11日 星期四 下午 3:10
地 點： 成功大學成功校區三系館鋼構區(3F)共同教室 A1302演講廳
歡迎參加!!