2025.11.29
Over the past 15 years, a wide range of atomically thin two-dimensional (2D) materials has been discovered and extensively studied. Among them, monolayer transition-metal dichalcogenides (TMDs) exhibit suitable bandgaps and high carrier mobility at the monolayer limit, making them strong candidates for post-silicon electronics. However, their dangling-bond-free surfaces hinder not only epitaxial growth by CVD but also uniform oxide formation through conventional ALD processes.
Consequently, 2D transistors still face major challenges, including large contact resistance, unreliable gate stacks, and immature doping techniques.
In this talk, I will highlight the key obstacles to realizing high-performance 2D transistors and outline our step-by-step strategies to address them.
歡迎各位撥冗參加!