113學年材料系-第二週 專題研討課程 演講公告 (113年9月16日)
2024.09.16
Atomic layer deposition (ALD) is an advanced technique for thin film
deposition, notable for its self-limiting, gas-phase surface reactions. This
enables precise control over both film composition and thickness,
facilitating the conformal coating of high-aspect-ratio structures.
Originally driven by the needs of the silicon industry, ALD has since
emerged as a key technology for creating high-performance, cost-
effective functional films, particularly for energy applications. In this
presentation, we will cover the fundamentals of ALD growth mechanisms
and highlight its promising applications in energy-related fields.
Additionally, we will present our recent findings and results related to
ALD technology.
deposition, notable for its self-limiting, gas-phase surface reactions. This
enables precise control over both film composition and thickness,
facilitating the conformal coating of high-aspect-ratio structures.
Originally driven by the needs of the silicon industry, ALD has since
emerged as a key technology for creating high-performance, cost-
effective functional films, particularly for energy applications. In this
presentation, we will cover the fundamentals of ALD growth mechanisms
and highlight its promising applications in energy-related fields.
Additionally, we will present our recent findings and results related to
ALD technology.