113學年材料所-第十二週 專題研討課程 演講公告 (114年5月8日)
2025.05.01
演講題目:
Low-Power Electronics: Advancing SOT-MRAM and Low-Voltage Magnetoelectric Devices
演講者: 黃彥霖助理教授(Prof. Yen-Lin Huang)
現職: 國立陽明交通大學 材料系 助理教授
時間: 114年05月08日(四) 下午15:20~17:10
地點: 成功大學成功校區三系館 鋼構區(3F)共同教室A1302演講廳
內容摘要:
In the response to the growing demand for low-power electronic devices, this talk explores innovative solutions for memory efficiency and device performance. Beginning with an overview of the critical need for energy-efficient electronics, we delve into the development of Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) and its potential to revolutionize data storage with high-speed, low-current operation. Emphasis is placed on overcoming material challenges, such as stabilizing β-tungsten, to enhance spin Hall conductivity and manufacturability. Additionally, the talk examines advances in low-voltage multiferroic and ferroelectric devices, focusing on approaches to achieve energy-efficient switching and reduce imprint effects through electrode engineering. Insights from Landau-Devonshire theory and experimental findings on BiFeO3-based materials underscore the interplay between chemical doping, thickness, and as-grown polarization control in tuning device properties. These breakthroughs set the stage for next-generation memory and computational architectures with unparalleled efficiency and scalability.
歡迎各位撥冗參加!!
Low-Power Electronics: Advancing SOT-MRAM and Low-Voltage Magnetoelectric Devices
演講者: 黃彥霖助理教授(Prof. Yen-Lin Huang)
現職: 國立陽明交通大學 材料系 助理教授
時間: 114年05月08日(四) 下午15:20~17:10
地點: 成功大學成功校區三系館 鋼構區(3F)共同教室A1302演講廳
內容摘要:
In the response to the growing demand for low-power electronic devices, this talk explores innovative solutions for memory efficiency and device performance. Beginning with an overview of the critical need for energy-efficient electronics, we delve into the development of Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) and its potential to revolutionize data storage with high-speed, low-current operation. Emphasis is placed on overcoming material challenges, such as stabilizing β-tungsten, to enhance spin Hall conductivity and manufacturability. Additionally, the talk examines advances in low-voltage multiferroic and ferroelectric devices, focusing on approaches to achieve energy-efficient switching and reduce imprint effects through electrode engineering. Insights from Landau-Devonshire theory and experimental findings on BiFeO3-based materials underscore the interplay between chemical doping, thickness, and as-grown polarization control in tuning device properties. These breakthroughs set the stage for next-generation memory and computational architectures with unparalleled efficiency and scalability.
歡迎各位撥冗參加!!