第三周碩博專討演講公告(09/30)
2021.09.26
碩博專討演講公告
題目:
Preparing InN for Potential Device Applications
主講人:許志偉 博士(Dr. Chih-Wei Hsu)
現職:林雪平大學(Linköping University)物理，化學暨生物系 半導體材料組 資深研究工程師
內容摘要:
Modern (opto)-electronic devices rely on heterojunctions of semiconductors. Indium nitride (InN) is a highly promising material given its low bandgap and high electron mobility, which is expected to extend the capability of existing light-emitting devices and high-frequency transistors. However, devices involving InN is far from mature partially due to the limitations in depositing very thin InN films of high quality.
In this presentation, the inherent properties of InN and the relevant challenges is briefly reviewed. As common material growth techniques are found unlikely to address all issues, an alternate growth technique based on surface reaction is proposed and demonstrated. Homogeneous InN layer down to 5 nm can be grown epitaxially on 4H-SiC substrate and other III-nitride templates. The dynamics of the deposition chemistry is believed to play a key role in preparing continuous nanometer-thin InN for device application.
時間:民國110年9月30日 星期四
地點:於moodle上觀看線上影片
歡迎參加!!
題目:
Preparing InN for Potential Device Applications
主講人:許志偉 博士(Dr. Chih-Wei Hsu)
現職:林雪平大學(Linköping University)物理，化學暨生物系 半導體材料組 資深研究工程師
內容摘要:
Modern (opto)-electronic devices rely on heterojunctions of semiconductors. Indium nitride (InN) is a highly promising material given its low bandgap and high electron mobility, which is expected to extend the capability of existing light-emitting devices and high-frequency transistors. However, devices involving InN is far from mature partially due to the limitations in depositing very thin InN films of high quality.
In this presentation, the inherent properties of InN and the relevant challenges is briefly reviewed. As common material growth techniques are found unlikely to address all issues, an alternate growth technique based on surface reaction is proposed and demonstrated. Homogeneous InN layer down to 5 nm can be grown epitaxially on 4H-SiC substrate and other III-nitride templates. The dynamics of the deposition chemistry is believed to play a key role in preparing continuous nanometer-thin InN for device application.
時間:民國110年9月30日 星期四
地點:於moodle上觀看線上影片
歡迎參加!!