113學年材料所-第十週 專題研討課程 演講公告 (113年11月14日)
2024.11.11
題目: 關於二維半導體材料的生長、異質元素植入、以及表面覆蓋
演講者: 林御專 教授
現職: 國立陽明交通大學 材料科學與工程系 助理教授
時間: 113年11月14日(四) 下午15:10~17:00
地點: 成功大學成功校區三系館 鋼構區(3F)共同教室A1302演講廳
演講摘要:
Two-dimensional (2D) transition metal dichalcogenides (TMDC), such as MoS2 and WSe2, exhibit useful material properties and versatile material chemistry for optoelectronic devices, quantum information, and energy missions. To realize these applications, we need to make them in large areas and be able to control their impurity concentrations. First, I will introduce our metalorganic chemical vapor deposition (MOCVD) process for the deposition of TMDC epitaxial monolayers and the approach for the growth of epitaxial TMDC multilayers on sapphire. Next, I will discuss how we introduced Re or V dopants into the cation sites of TMDC by MOCVD and their impact on the quality and properties of TMDC films.[3] In addition to cation substitutional doping, we can create Janus TMDC with an intrinsic dipole moment by replacing the elements at the anion sites (i.e., S and Se). I will present our result [4,5] of the conversion of 2D WS2 and MoS2 into 2D Janus WSSe and MoSSe by pulsed laser deposition and explain how we confirmed the presence of a dipole moment in 2D Janus TMDC optically. To improve the interface quality between TMDC and oxide dielectric materials for electronic applications, we developed thermal atomic layer deposition (ALD) of amorphous boron nitride (aBN) on both traditional and van der Waals surfaces. In the end, I will talk about the nucleation and growth of aBN on the MoS2 surface in our thermal ALD and aBN/MoS2 integration to improve field-effect transistor performance and quantum well fabrication.[6]
歡迎各位撥冗參加!!
References: [1] Lin et al., ACS Nano 2018, 12, 965–975. [2] Eichfeld et al., ACS Nano 2015, 9, 2080–2087. [3] Torsi et al., ACS Nano 2023, 17, 15629–15640. [4] Lin et al., ACS Nano 2020, 14, 3896–3906. [5] Zheng et al., ACS Nano 2022, 16, 4197–4205. [6] Chen et al., Nat. Comm. 2024 15, 4016.
演講者: 林御專 教授
現職: 國立陽明交通大學 材料科學與工程系 助理教授
時間: 113年11月14日(四) 下午15:10~17:00
地點: 成功大學成功校區三系館 鋼構區(3F)共同教室A1302演講廳
演講摘要:
Two-dimensional (2D) transition metal dichalcogenides (TMDC), such as MoS2 and WSe2, exhibit useful material properties and versatile material chemistry for optoelectronic devices, quantum information, and energy missions. To realize these applications, we need to make them in large areas and be able to control their impurity concentrations. First, I will introduce our metalorganic chemical vapor deposition (MOCVD) process for the deposition of TMDC epitaxial monolayers and the approach for the growth of epitaxial TMDC multilayers on sapphire. Next, I will discuss how we introduced Re or V dopants into the cation sites of TMDC by MOCVD and their impact on the quality and properties of TMDC films.[3] In addition to cation substitutional doping, we can create Janus TMDC with an intrinsic dipole moment by replacing the elements at the anion sites (i.e., S and Se). I will present our result [4,5] of the conversion of 2D WS2 and MoS2 into 2D Janus WSSe and MoSSe by pulsed laser deposition and explain how we confirmed the presence of a dipole moment in 2D Janus TMDC optically. To improve the interface quality between TMDC and oxide dielectric materials for electronic applications, we developed thermal atomic layer deposition (ALD) of amorphous boron nitride (aBN) on both traditional and van der Waals surfaces. In the end, I will talk about the nucleation and growth of aBN on the MoS2 surface in our thermal ALD and aBN/MoS2 integration to improve field-effect transistor performance and quantum well fabrication.[6]
歡迎各位撥冗參加!!
References: [1] Lin et al., ACS Nano 2018, 12, 965–975. [2] Eichfeld et al., ACS Nano 2015, 9, 2080–2087. [3] Torsi et al., ACS Nano 2023, 17, 15629–15640. [4] Lin et al., ACS Nano 2020, 14, 3896–3906. [5] Zheng et al., ACS Nano 2022, 16, 4197–4205. [6] Chen et al., Nat. Comm. 2024 15, 4016.